PART |
Description |
Maker |
SFF10N100_3 SFF10N100-3 SFF10N100/3 |
10 AMP 1000 Volts 1.2 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆 TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
1N4002GP 1N4005GP 1N4003GP 1N4007GP 1N4001GP 1N400 |
1 Amp Glass PassivatedRectifier 50 - 1000 Volts 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp. Micro Commercial Components Corp. MCC[Micro Commercial Components]
|
HER507 HER504 HER505 HER508 HER502 HER503 HER501 H |
5.0 Amp High Efficient Rectiffiers 50 to 1000 Volts 5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Micro Commercial Components, Corp. MCC[Micro Commercial Components]
|
MTB1N100E_D ON2398 MTB1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
|
Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc] Motorola, Inc. ON SEMICONDUCTOR
|
10A02 10A06 |
10 Amp Rectifier 50 to 1000 Volts
|
Micro Commercial Components
|
RL104 RL105 RL107 RL101 RL102 RL103 RL106 |
1 Amp Rectifier 50 - 1000 Volts
|
MCC[Micro Commercial Components]
|
10A01-13 |
10 Amp Rectifier 50 to 1000 Volts
|
Micro Commercial Compon...
|
1N4005H-T 1N4002H-T 1N4001H-T 1N4003H-T |
1 Amp Rectifier 50 - 1000 Volts
|
Micro Commercial Components Corp.
|